It was invented in 1959, and presented in 1960. The first insulated-gate field-effect transistor was designed and prepared by Mohamed Atalla and Dawon Kahng at Bell Labs using a metal–oxide–semiconductor: the MOSFET (metal–oxide–semiconductor field-effect transistor). Applied voltage on the gate electrode controls the amount of charge carriers flowing through the system. He proposed that a field-effect transistor behaves as a capacitor with a conducting channel between a source and a drain electrode. The concept of a field-effect transistor (FET) was first proposed by Julius Edgar Lilienfeld, who received a patent for his idea in 1930. In May 2007, Sony reported the first full-color, video-rate, flexible, all plastic display, in which both the thin-film transistors and the light-emitting pixels were made of organic materials. One of the benefits of OFETs, especially compared with inorganic TFTs, is their unprecedented physical flexibility, which leads to biocompatible applications, for instance in the future health care industry of personalized biomedicines and bioelectronics. Organic polymers, such as poly(methyl-methacrylate) ( PMMA), can also be used as dielectric. The most commonly used device geometry is bottom gate with top drain and source electrodes, because this geometry is similar to the thin-film silicon transistor (TFT) using thermally grown SiO 2 as gate dielectric. OFETs have been fabricated with various device geometries. These devices have been developed to realize low-cost, large-area electronic products and biodegradable electronics. OFETs can be prepared either by vacuum evaporation of small molecules, by solution-casting of polymers or small molecules, or by mechanical transfer of a peeled single-crystalline organic layer onto a substrate.

Scale bar: 25 mmĪn organic field-effect transistor ( OFET) is a field-effect transistor using an organic semiconductor in its channel.

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